Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/length: 6.55 mm
External dimensions/width: 3.55 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: SOT-223
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP56T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR BCP56T1G 单晶体管 双极, 通用, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 250 hFE
|
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