Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/length: 6.55 mm
External dimensions/width: 3.55 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: SOT-223
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP54,115
|
NXP | 功能相似 | TO-261-4 |
NXP BCP54,115 单晶体管 双极, NPN, 45 V, 180 MHz, 650 mW, 1 A, 63 hFE
|
||
BCP54,115
|
Nexperia | 功能相似 | TO-261-4 |
NXP BCP54,115 单晶体管 双极, NPN, 45 V, 180 MHz, 650 mW, 1 A, 63 hFE
|
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