Technical parameters/frequency: 180 MHz
Technical parameters/rated power: 1.35 W
Technical parameters/number of pins: 4
Technical parameters/dissipated power: 1.35 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 63 @150mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 63
Technical parameters/rated power (Max): 960 mW
Technical parameters/DC current gain (hFE): 63
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power management, industrial, automotive applications
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
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Infineon | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR BCP54 单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 25 hFE
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SHIKUES | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR BCP54 单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 25 hFE
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Philips | 功能相似 |
FAIRCHILD SEMICONDUCTOR BCP54 单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 25 hFE
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Continental Device | 功能相似 |
FAIRCHILD SEMICONDUCTOR BCP54 单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 25 hFE
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BCP54,135
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NXP | 类似代替 | TO-261-4 |
SC-73 NPN 45V 1A
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BCP54,135
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Nexperia | 类似代替 | TO-261-4 |
SC-73 NPN 45V 1A
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BCP54-10,135
|
NXP | 类似代替 | TO-261-4 |
NXP BCP54-10,135 单晶体管 双极, NPN, 45 V, 180 MHz, 640 mW, 1 A, 63 hFE
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BCP54-10,135
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Nexperia | 类似代替 | TO-261-4 |
NXP BCP54-10,135 单晶体管 双极, NPN, 45 V, 180 MHz, 640 mW, 1 A, 63 hFE
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