Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1350 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 63 @150mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 63 @5mA, 2V
Technical parameters/rated power (Max): 960 mW
Technical parameters/dissipated power (Max): 1350 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Infineon | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR BCP54 单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 25 hFE
|
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|
|
SHIKUES | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR BCP54 单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 25 hFE
|
||
BCP54
|
Philips | 功能相似 |
FAIRCHILD SEMICONDUCTOR BCP54 单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 25 hFE
|
|||
|
BCP54
|
Continental Device | 功能相似 |
FAIRCHILD SEMICONDUCTOR BCP54 单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 25 hFE
|
|||
BCP54,115
|
NXP | 类似代替 | TO-261-4 |
NXP BCP54,115 单晶体管 双极, NPN, 45 V, 180 MHz, 650 mW, 1 A, 63 hFE
|
||
BCP54,115
|
Nexperia | 类似代替 | TO-261-4 |
NXP BCP54,115 单晶体管 双极, NPN, 45 V, 180 MHz, 650 mW, 1 A, 63 hFE
|
||
BCP54-10,135
|
NXP | 类似代替 | TO-261-4 |
NXP BCP54-10,135 单晶体管 双极, NPN, 45 V, 180 MHz, 640 mW, 1 A, 63 hFE
|
||
BCP54-10,135
|
Nexperia | 类似代替 | TO-261-4 |
NXP BCP54-10,135 单晶体管 双极, NPN, 45 V, 180 MHz, 640 mW, 1 A, 63 hFE
|
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