Technical parameters/frequency: 100 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens AG | 完全替代 |
Bipolar - RF Transistor, NPN, 45V, 100MHz, 200mW, 100mA, 450 hFE
|
|||
BC850BW
|
Infineon | 完全替代 | SOT-323 |
Bipolar - RF Transistor, NPN, 45V, 100MHz, 200mW, 100mA, 450 hFE
|
||
BC850CW,115
|
Nexperia | 类似代替 | SOT-323-3 |
NXP BC850CW,115 单晶体管 双极, NPN, 45 V, 100 MHz, 200 mW, 100 mA, 420 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review