Technical parameters/rated power: 0.2 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 420
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, consumer electronics, power management, audio
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS70-05W,115
|
NXP | 完全替代 | SOT-323-3 |
Nexperia 二极管 BAS70-05W,115 肖特基, Io=70mA, Vrev=70V, 3引脚 SOT-323 (SC-70)封装
|
||
|
|
Philips | 完全替代 | SC-70 |
Nexperia 二极管 BAS70-05W,115 肖特基, Io=70mA, Vrev=70V, 3引脚 SOT-323 (SC-70)封装
|
||
BC847CW,115
|
NXP | 完全替代 | SOT-323-3 |
BC847CW,115 编带
|
||
BC850CW,135
|
Nexperia | 完全替代 | SOT-323-3 |
BC850CW 系列 45 V 100 mA 表面贴装 NPN 通用 晶体管 - SOT-323
|
||
BC850CW,135
|
NXP | 完全替代 | SOT-323-3 |
BC850CW 系列 45 V 100 mA 表面贴装 NPN 通用 晶体管 - SOT-323
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review