Technical parameters/frequency: 300 MHz
Technical parameters/dissipated power: 0.25 W
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847B
|
Multicomp | 完全替代 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC847B
|
SLKOR. | 完全替代 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC847B
|
ST Microelectronics | 完全替代 | SOT-23-3 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC847B
|
Philips | 完全替代 | TO-236 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
|
BC847B
|
Kexin | 完全替代 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
|||
BC847B
|
Infineon | 完全替代 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
|
BC847B
|
SHIKUES | 完全替代 | SHIKUES(时科) |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC847C,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP BC847C,215 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE
|
||
|
|
Philips | 完全替代 | TO-236 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC850C
|
NXP | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
|
BC850C
|
Kexin | 完全替代 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
|
BC850C
|
Panjit | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC850CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC850CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 800 hFE
|
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