Technical parameters/dissipated power: 250 mW
Technical parameters/minimum current amplification factor (hFE): 200
Technical parameters/DC current gain (hFE): 290
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847,215
|
Nexperia | 功能相似 | SOT-23-3 |
BC847 系列 45 V 100 mA 表面贴装 NPN 通用 晶体管 - SOT-23-3
|
||
BC847ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847ALT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC847B,215
|
NXP | 类似代替 | SOT-23-3 |
NXP BC847B,215 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 200 hFE
|
||
BC847BLT1G
|
LiteOn | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847BLT1G. 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 450 hFE
|
||
BC847BLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847BLT1G. 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 450 hFE
|
||
BC847CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
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