Technical parameters/minimum current amplification factor (hFE): 220
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC859C
|
VISHAY | 功能相似 | 3 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC859C
|
Diotec Semiconductor | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC859C
|
NXP | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC860B
|
Nexperia | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC860B
|
Zetex | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
|
BC860B
|
Fairchild | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
|
BC860B
|
Kexin | 功能相似 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC860BMTF
|
Fairchild | 功能相似 | SOT-23-3 |
PNP 晶体管，40 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
BC860BMTF
|
ON Semiconductor | 功能相似 | SOT-23-3 |
PNP 晶体管，40 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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