Technical parameters/rated voltage (DC): -65.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 125 @2mA, 5V
Technical parameters/rated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC856A
|
AUK Semiconductor | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
||
BC856A
|
Multicomp | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
||
BC856A
|
Rectron | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
||
BC856A
|
Kexin | 功能相似 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC856A
|
Infineon | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
||
BC856A-7-F
|
Multicomp | 类似代替 | SOT-23 |
三极管
|
||
BC856A-7-F
|
Diodes | 类似代替 | SOT-23-3 |
三极管
|
||
BC856A-7-F
|
Diodes Zetex | 类似代替 | SOT-23-3 |
三极管
|
||
BC856ALT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BC856ALT1G 单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 225 mW, -100 mA, 100 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review