Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 类似代替 | TO-92 |
TRANS NPN 45V 1A TO-92
|
||
BC635
|
Fairchild | 类似代替 | TO-92-3 |
TRANS NPN 45V 1A TO-92
|
||
BC635
|
Micro Electronics | 类似代替 |
TRANS NPN 45V 1A TO-92
|
|||
BC635
|
CDIL | 类似代替 |
TRANS NPN 45V 1A TO-92
|
|||
BC635
|
NXP | 类似代替 | TO-92 |
TRANS NPN 45V 1A TO-92
|
||
BC635
|
Philips | 类似代替 | SPT |
TRANS NPN 45V 1A TO-92
|
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