Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.00 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | TO-92 |
MULTICOMP BC635 单晶体管 双极, 通用, NPN, 45 V, 200 MHz, 800 mW, 1 A, 100 hFE
|
||
BC635
|
Fairchild | 功能相似 | TO-92-3 |
MULTICOMP BC635 单晶体管 双极, 通用, NPN, 45 V, 200 MHz, 800 mW, 1 A, 100 hFE
|
||
BC635
|
Micro Electronics | 功能相似 |
MULTICOMP BC635 单晶体管 双极, 通用, NPN, 45 V, 200 MHz, 800 mW, 1 A, 100 hFE
|
|||
BC635
|
CDIL | 功能相似 |
MULTICOMP BC635 单晶体管 双极, 通用, NPN, 45 V, 200 MHz, 800 mW, 1 A, 100 hFE
|
|||
|
BC635
|
NXP | 功能相似 | TO-92 |
MULTICOMP BC635 单晶体管 双极, 通用, NPN, 45 V, 200 MHz, 800 mW, 1 A, 100 hFE
|
||
|
BC635
|
Philips | 功能相似 | SPT |
MULTICOMP BC635 单晶体管 双极, 通用, NPN, 45 V, 200 MHz, 800 mW, 1 A, 100 hFE
|
||
BC635RL1G
|
ON Semiconductor | 功能相似 | TO-226-3 |
TO-92 NPN 45V 1A
|
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