Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 120 @2mA, 5V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC308A
|
Fairchild | 完全替代 | TO-226-3 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC308A
|
ON Semiconductor | 完全替代 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC308ABU
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT PNP 25V 0.1A 3Pin TO-92 Bulk
|
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