Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 25 V |
|
Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 120 @2mA, 5V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC308A
|
Fairchild | 完全替代 | TO-226-3 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC308A
|
ON Semiconductor | 完全替代 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC308ATA
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT PNP 25V 0.1A 3Pin TO-92 Ammo
|
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