Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 120 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 500
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT5087LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT5087LT1G 单晶体管 双极, 通用, PNP, -50 V, 40 MHz, 225 mW, -50 mA, 40 hFE
|
||
ZTX451
|
Diodes Zetex | 功能相似 | TO-92-3 |
ZTX451 系列 60 V 1 A NPN 硅 面板 中等功率 晶体管 - TO-92-3
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ZTX451
|
Diodes | 功能相似 | TO-92-3 |
ZTX451 系列 60 V 1 A NPN 硅 面板 中等功率 晶体管 - TO-92-3
|
||
|
|
Zetex | 功能相似 | TO-92-3 |
ZTX451 系列 60 V 1 A NPN 硅 面板 中等功率 晶体管 - TO-92-3
|
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