Technical parameters/minimum current amplification factor (hFE): 10
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: TO-92-3
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 功能相似 |
晶体管放大器 Amplifier Transistor
|
|||
BC182A
|
ON Semiconductor | 功能相似 | TO-92-3 |
晶体管放大器 Amplifier Transistor
|
||
BC548C
|
Taiwan Semiconductor | 功能相似 | TO-92 |
Transistor: NPN; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC548C
|
NXP | 功能相似 | TO-92 |
Transistor: NPN; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC548C
|
Micro Commercial Components | 功能相似 | TO-92 |
Transistor: NPN; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC548C
|
Infineon | 功能相似 | TO-92 |
Transistor: NPN; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
ZTX451STZ
|
Diodes Zetex | 完全替代 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Medium Power
|
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