Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 120 @2mA, 5V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC182B
|
ON Semiconductor | 类似代替 | TO-226-3 |
MULTICOMP BC182B 单晶体管 双极, NPN, 50 V, 200 MHz, 350 mW, 100 mA, 120 hFE
|
||
BC182B
|
NXP | 类似代替 | TO-92 |
MULTICOMP BC182B 单晶体管 双极, NPN, 50 V, 200 MHz, 350 mW, 100 mA, 120 hFE
|
||
BC182B
|
Fairchild | 类似代替 | TO-92-3 |
MULTICOMP BC182B 单晶体管 双极, NPN, 50 V, 200 MHz, 350 mW, 100 mA, 120 hFE
|
||
BC182B
|
CDIL | 类似代替 |
MULTICOMP BC182B 单晶体管 双极, NPN, 50 V, 200 MHz, 350 mW, 100 mA, 120 hFE
|
|||
BC182B
|
Rochester | 类似代替 | TO-92 |
MULTICOMP BC182B 单晶体管 双极, NPN, 50 V, 200 MHz, 350 mW, 100 mA, 120 hFE
|
||
MMBT5087LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT5087LT1G 单晶体管 双极, 通用, PNP, -50 V, 40 MHz, 225 mW, -50 mA, 40 hFE
|
||
ZTX451
|
Diodes Zetex | 功能相似 | TO-92-3 |
ZTX451 系列 60 V 1 A NPN 硅 面板 中等功率 晶体管 - TO-92-3
|
||
ZTX451
|
Diodes | 功能相似 | TO-92-3 |
ZTX451 系列 60 V 1 A NPN 硅 面板 中等功率 晶体管 - TO-92-3
|
||
|
|
Zetex | 功能相似 | TO-92-3 |
ZTX451 系列 60 V 1 A NPN 硅 面板 中等功率 晶体管 - TO-92-3
|
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