Technical parameters/number of pins: 3
Technical parameters/forward voltage: 380 mV
Technical parameters/forward current: 120 mA
Technical parameters/Maximum forward surge current (Ifsm): 200 mA
Technical parameters/forward voltage (Max): 1 V
Technical parameters/forward current (Max): 120 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Won-Top Electronics | 类似代替 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
|||
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Semtech Corporation | 类似代替 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
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|
|
CJ | 类似代替 | SOT-323 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
BAS40W
|
Galaxy Semi-Conductor | 类似代替 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
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|
BAS40W
|
Philips | 类似代替 | SC-70 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
BAS40W
|
NXP | 类似代替 | SOT-323 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
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