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Model APT6010JFLL
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhanced power MOSFET. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Product QR code
Brand: Microsemi
Packaging SOT-227
Delivery time
Packaging method Tube
Standard packaging quantity 1
319.26  yuan 319.26yuan
1+:
$ 367.1456
10+:
$ 357.5678
50+:
$ 350.2249
100+:
$ 347.6709
200+:
$ 345.7553
500+:
$ 343.2013
1000+:
$ 341.6050
2000+:
$ 340.0087
Quantity
1+
10+
50+
100+
200+
Price
$367.1456
$357.5678
$350.2249
$347.6709
$345.7553
Price $ 367.1456 $ 357.5678 $ 350.2249 $ 347.6709 $ 345.7553
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9815) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 47.0 A

Technical parameters/dissipated power: 520 W

Technical parameters/input capacitance: 6.71 nF

Technical parameters/gate charge: 150 nC

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 47.0 A

Technical parameters/rise time: 17 ns

Technical parameters/Input capacitance (Ciss): 6710pF @25V(Vds)

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 520000 mW

Encapsulation parameters/installation method: Screw

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-227

External dimensions/packaging: SOT-227

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
APT6010JLL APT6010JLL Microsemi 完全替代 SOT-227
功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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