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Model APT6010JLL
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhanced power MOSFET. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Brand: Microsemi
Packaging SOT-227
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Packaging method Tube, Rail
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4336) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 47.0 A

Technical parameters/polarity: N-CH

Technical parameters/input capacitance: 6.71 nF

Technical parameters/gate charge: 150 nC

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 47.0 A

Encapsulation parameters/installation method: Screw

Encapsulation parameters/Encapsulation: SOT-227

External dimensions/packaging: SOT-227

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube, Rail

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
APT6010JFLL APT6010JFLL Microsemi 完全替代 SOT-227
功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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