Technical parameters/minimum current amplification factor (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1.2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: TO-236
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: PB free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC2655
|
CJ | 功能相似 | TO-92 |
NPN SILICON TRANSISTOR
|
||
2SC2655
|
Toshiba | 功能相似 | TO-92 |
NPN SILICON TRANSISTOR
|
||
2SC2655-O-AE3-R
|
UTC | 功能相似 | SOT-23 |
NPN SILICON TRANSISTOR
|
||
BCW66HTA
|
Diodes | 功能相似 | SOT-23-3 |
BCW66HTA 编带
|
||
FMMT619
|
Vishay Semiconductor | 功能相似 | SOT-23 |
DIODES INC. FMMT619 单晶体管 双极, NPN, 50 V, 140 MHz, 625 mW, 2 A, 450 hFE
|
||
FMMT619
|
CJ | 功能相似 | SOT-23-3 |
DIODES INC. FMMT619 单晶体管 双极, NPN, 50 V, 140 MHz, 625 mW, 2 A, 450 hFE
|
||
FMMT619
|
Diodes | 功能相似 | SOT-23 |
DIODES INC. FMMT619 单晶体管 双极, NPN, 50 V, 140 MHz, 625 mW, 2 A, 450 hFE
|
||
PBSS4350T,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP PBSS4350T,215 单晶体管 双极, NPN, 50 V, 100 MHz, 300 mW, 3 A, 300 hFE
|
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