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Description Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia
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Brand: Nexperia
Packaging TO-236
Delivery time
Packaging method
Standard packaging quantity 1
1.83  yuan 1.83yuan
5+:
$ 2.4705
25+:
$ 2.2875
50+:
$ 2.1594
100+:
$ 2.1045
500+:
$ 2.0679
2500+:
$ 2.0222
5000+:
$ 2.0039
10000+:
$ 1.9764
Quantity
5+
25+
50+
100+
500+
Price
$2.4705
$2.2875
$2.1594
$2.1045
$2.0679
Price $ 2.4705 $ 2.2875 $ 2.1594 $ 2.1045 $ 2.0679
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(1986) Minimum order quantity(5)
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Technical parameters/minimum current amplification factor (hFE): 100

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 1.2 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-236

External dimensions/length: 3 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1 mm

External dimensions/packaging: TO-236

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: PB free

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