Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 7.3 ns
Technical parameters/Input capacitance (Ciss): 24.5pF @20V(Vds)
Technical parameters/rated power (Max): 250 mW
Technical parameters/descent time: 30.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-563-6
External dimensions/length: 1.6 mm
External dimensions/width: 1.2 mm
External dimensions/height: 0.55 mm
External dimensions/packaging: SOT-563-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTZD5110NT1G
|
ON Semiconductor | 类似代替 | SOT-563-6 |
60 V,0.31A功率MOSFET,带ESD保护
|
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