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Model NTZD5110NT1G

Description 60 V,0.31A功率MOSFET,带ESD保护

Brand: ON Semiconductor

Packaging SOT-563-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	6
Technical parameters/drain source resistance:	1.19 Ω
Technical parameters/polarity:	Dual N-Channel
Technical parameters/dissipated power:	250 mW
Technical parameters/threshold voltage:	2.5 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Continuous drain current (Ids):	310 mA, 294 mA
Technical parameters/rise time:	7.3 ns
Technical parameters/Input capacitance (Ciss):	24.5pF @20V(Vds)
Technical parameters/rated power (Max):	250 mW
Technical parameters/descent time:	7.3 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	280 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SOT-563-6
Dimensions/Length:	1.7 mm
Dimensions/Width:	1.3 mm
Dimensions/Height:	0.6 mm
Dimensions/Packaging:	SOT-563-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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