Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 30 @250mA, 1V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4237
|
Microsemi | 功能相似 | TO-39 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SS
|
||
2N4237
|
Central Semiconductor | 功能相似 | TO-39-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SS
|
||
2N4237
|
Fairchild | 功能相似 | TO-39 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SS
|
||
2N4237
|
Freescale | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SS
|
|||
2N4237
|
ON Semiconductor | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SS
|
|||
JAN2N4237
|
Microsemi | 完全替代 | TO-205 |
Trans Npn 40V 1A To39
|
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