Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 30 @250mA, 1V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4237
|
Microsemi | 类似代替 | TO-39 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
2N4237
|
Central Semiconductor | 类似代替 | TO-39-3 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
2N4237
|
Fairchild | 类似代替 | TO-39 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
2N4237
|
Freescale | 类似代替 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
|||
2N4237
|
ON Semiconductor | 类似代替 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
|||
JANTX2N4237
|
Microsemi | 完全替代 | TO-205 |
Trans GP BJT NPN 40V 1A 3Pin TO-39
|
||
JANTXV2N4237
|
Microsemi | 完全替代 | TO-205 |
Trans GP BJT NPN 40V 1A 3Pin TO-39
|
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