Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 5V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/packaging: SMD-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANS2N4033UB
|
Semicoa Semiconductor | 完全替代 | 4 |
Trans GP BJT PNP 80V 1A 3Pin UB
|
||
JANS2N4033UB
|
Microsemi | 完全替代 |
Trans GP BJT PNP 80V 1A 3Pin UB
|
|||
JANTXV2N4033UB
|
Microsemi | 类似代替 | UB |
双极晶体管 - 双极结型晶体管(BJT) BJTs
|
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