Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: UB
External dimensions/packaging: UB
Physical parameters/materials: Silicon
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Pack
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4033UB
|
Microsemi | 类似代替 | SMD-3 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
JANS2N4033UB
|
Semicoa Semiconductor | 类似代替 | 4 |
Trans GP BJT PNP 80V 1A 3Pin UB
|
||
JANS2N4033UB
|
Microsemi | 类似代替 |
Trans GP BJT PNP 80V 1A 3Pin UB
|
|||
JANTXV2N4033UB
|
Microsemi | 类似代替 | UB |
Trans GP BJT PNP 80V 1A 3Pin CSOT-23
|
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