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Model FDD8796
Description PowerTrench® N Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor # # MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.48  yuan 2.48yuan
5+:
$ 3.3467
25+:
$ 3.0988
50+:
$ 2.9252
100+:
$ 2.8509
500+:
$ 2.8013
2500+:
$ 2.7393
5000+:
$ 2.7145
10000+:
$ 2.6773
Quantity
5+
25+
50+
100+
500+
Price
$3.3467
$3.0988
$2.9252
$2.8509
$2.8013
Price $ 3.3467 $ 3.0988 $ 2.9252 $ 2.8509 $ 2.8013
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6079) Minimum order quantity(5)
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Technical parameters/drain source resistance: 4.50 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 88 W

Technical parameters/drain source voltage (Vds): 25 V

Technical parameters/leakage source breakdown voltage: 25.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 35.0 A

Technical parameters/rise time: 24 ns

Technical parameters/Input capacitance (Ciss): 2610pF @13V(Vds)

Technical parameters/rated power (Max): 88 W

Technical parameters/descent time: 57 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 88W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDD3682 FDD3682 Fairchild 功能相似 TO-252-3
FDD3682 编带
STW12NK90Z STW12NK90Z ST Microelectronics 功能相似 TO-247-3
STMICROELECTRONICS STW12NK90Z 功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V
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