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Model PD57006TR-E
Description RFPower transistor, LDMOST plastic series N-channel enhancement mode lateral MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Product QR code
Brand: ST Microelectronics
Packaging PowerSO-10RF
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
10.28  yuan 10.28yuan
5+:
$ 12.0218
50+:
$ 11.5080
200+:
$ 11.2203
500+:
$ 11.1484
1000+:
$ 11.0765
2500+:
$ 10.9943
5000+:
$ 10.9429
7500+:
$ 10.8915
Quantity
5+
50+
200+
500+
1000+
Price
$12.0218
$11.5080
$11.2203
$11.1484
$11.0765
Price $ 12.0218 $ 11.5080 $ 11.2203 $ 11.1484 $ 11.0765
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6301) Minimum order quantity(5)
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Technical parameters/frequency: 945 MHz

Technical parameters/dissipated power: 20000 mW

Technical parameters/drain source voltage (Vds): 65 V

Technical parameters/output power: 6 W

Technical parameters/gain: 15 dB

Technical parameters/test current: 70 mA

Technical parameters/Input capacitance (Ciss): 27pF @28V(Vds)

Technical parameters/operating temperature (Max): 165 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 20000 mW

Technical parameters/rated voltage: 65 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: PowerSO-10RF

External dimensions/packaging: PowerSO-10RF

Physical parameters/operating temperature: -65℃ ~ 165℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PD57006S-E PD57006S-E ST Microelectronics 类似代替 PowerSO-10RF
LDMOST 系列 N沟道 增强模式 射频 功率晶体管 PowerSO-10RF
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