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Model PD57006S-E
Description LDMOST Series N-channel enhanced mode RF power transistor PowerSO-10RF
Product QR code
Brand: ST Microelectronics
Packaging PowerSO-10RF
Delivery time
Packaging method Tube
Standard packaging quantity 1
95.14  yuan 95.14yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4718) Minimum order quantity(1)
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Technical parameters/frequency:

945 MHz

 

Technical parameters/rated current:

1 A

 

Technical parameters/dissipated power:

20 W

 

Technical parameters/Leakage source breakdown voltage:

65 V

 

Technical parameters/output power:

6 W

 

Technical parameters/gain:

15 dB

 

Technical parameters/test current:

70 mA

 

Technical parameters/Input capacitance (Ciss):

27pF @28V(Vds)

 

Technical parameters/operating temperature (Max):

165 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

20000 mW

 

Technical parameters/rated voltage:

65 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

PowerSO-10RF

 

Dimensions/Length:

7.5 mm

 

Dimensions/Width:

9.4 mm

 

Dimensions/Height:

3.5 mm

 

Dimensions/Packaging:

PowerSO-10RF

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PD57006S-E PD57006S-E ST Microelectronics 类似代替 PowerSO-10RF
LDMOST 系列 N沟道 增强模式 射频 功率晶体管 PowerSO-10RF
PDF
PD57006TR-E PD57006TR-E ST Microelectronics 类似代替 PowerSO-10RF
RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PDF

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