Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -11.0 A
Technical parameters/drain source resistance: 13.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5W (Ta)
Technical parameters/input capacitance: 2.33 nF
Technical parameters/gate charge: 24.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): 11.0 A
Technical parameters/rise time: 12.0 ns
Technical parameters/Input capacitance (Ciss): 2330pF @15V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TPS1100D
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
||
TPS1100DR
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
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