Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 2.60 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 90.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.1 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.60 A
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/rated power (Max): 1.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.8 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUFA75307T3ST
|
Fairchild | 功能相似 | TO-261-4 |
2.6A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET
|
||
HUFA75307T3ST_NL
|
Fairchild | 功能相似 | SOT-223 |
SOT-223 N-CH 55V 2.6A
|
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