Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 310 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 310 mW
Technical parameters/DC current gain (hFE): 60
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 310 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC817-16LT1G
|
Rochester | 功能相似 | SOT-23 |
ON SEMICONDUCTOR BC817-16LT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE
|
||
BC817-25LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC817-25LT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE
|
||
BCW66GLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review