Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 7.9 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 60 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 7.50 A
Technical parameters/rise time: 32 ns
Technical parameters/Input capacitance (Ciss): 965pF @25V(Vds)
Technical parameters/rated power (Max): 4 W
Technical parameters/descent time: 8.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 60W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerFLAT-5x6-8
External dimensions/length: 5 mm
External dimensions/width: 6 mm
External dimensions/height: 0.81 mm
External dimensions/packaging: PowerFLAT-5x6-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSC080N03LSGATMA1
|
Infineon | 功能相似 | PG-TDSON-8 |
INFINEON BSC080N03LSGATMA1 晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
|
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