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Model FDN342P
Description PowerTrench® P Channel MOSFET, Fairchild Semiconductor PowerTrench ® MOSFET is an optimized power switch that can improve system efficiency and power density. They combine small gate charges (Qg), small reverse recovery charges (Qrr), and soft reverse recovery main diodes, which help to quickly switch synchronous rectification in AC/DC power supplies. The latest PowerTrench ® MOSFET adopts a shielded gate structure, which can provide charge balance. By utilizing this advanced technology, the FOM (quality factor) of these devices is significantly lower than the previous FOM. PowerTrench ® The soft body diode performance of MOSFETs can be achieved without the need for buffer circuits or the replacement of MOSFETs with higher rated voltages. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.61  yuan 0.61yuan
10+:
$ 0.8168
50+:
$ 0.7744
100+:
$ 0.7442
300+:
$ 0.7260
500+:
$ 0.7079
1000+:
$ 0.6897
2500+:
$ 0.6625
5000+:
$ 0.6564
Quantity
10+
50+
100+
300+
500+
Price
$0.8168
$0.7744
$0.7442
$0.7260
$0.7079
Price $ 0.8168 $ 0.7744 $ 0.7442 $ 0.7260 $ 0.7079
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7062) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): -20.0 V

Technical parameters/rated current: -2.00 A

Technical parameters/drain source resistance: 0.062 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 500 mW

Technical parameters/threshold voltage: 1.05 V

Technical parameters/input capacitance: 635 pF

Technical parameters/gate charge: 6.30 nC

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 2.00 A

Technical parameters/rise time: 8 ns

Technical parameters/Input capacitance (Ciss): 635pF @10V(Vds)

Technical parameters/rated power (Max): 460 mW

Technical parameters/descent time: 19 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 500mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/length: 2.92 mm

External dimensions/width: 1.4 mm

External dimensions/height: 0.94 mm

External dimensions/packaging: SOT-23-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

Customs Information/Hong Kong Import and Export License: NLR

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Model Brand Similarity Encapsulation Introduction Data manual
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ON SEMICONDUCTOR NTR1P02LT1G. 场效应管, MOSFET, P沟道, -20V, 1.3A SOT-23
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P 通道功率 MOSFET，20V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
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