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Model NTR1P02LT1G

Description ON SEMICONDUCTOR NTR1P02LT1G. 场效应管, MOSFET, P沟道, -20V, 1.3A SOT-23

Brand: ON Semiconductor

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	-20.0 V
Technical parameters/rated current:	-1.30 A
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.14 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	400 mW
Technical parameters/Input capacitance:	225 pF
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/breakdown voltage of gate source:	±12.0 V
Technical parameters/Continuous drain current (Ids):	1.30 A, 1.30 mA
Technical parameters/rise time:	15 ns
Technical parameters/Input capacitance (Ciss):	225pF @5V(Vds)
Technical parameters/rated power (Max):	400 mW
Technical parameters/descent time:	20 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	400mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99