Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 2000 @5A, 5V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-213
External dimensions/packaging: TO-213
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6352
|
New Jersey Semiconductor | 完全替代 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
|||
2N6352
|
Microsemi | 完全替代 | TO-213 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
||
JAN2N6352
|
Microsemi | 完全替代 | TO-213 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
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