Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-213
External dimensions/packaging: TO-213
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6352
|
New Jersey Semiconductor | 完全替代 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
|||
2N6352
|
Microsemi | 完全替代 | TO-213 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
||
JANTX2N6352
|
Microsemi | 完全替代 | TO-213 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
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