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Model 2N5886G
Description NPN Power transistor, ON Semiconductor # # # standard manufacturer part number with NSV prefix has automotive qualification and complies with AEC-Q101 standard. ###Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, general-purpose transistors, dual NPN and PNP transistors, power transistors, high-voltage transistors, RF bipolar transistors, low-noise, dual matched, and complex bipolar transistors
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Brand: ON Semiconductor
Packaging TO-204-2
Delivery time
Packaging method Tray
Standard packaging quantity 1
21.08  yuan 21.08yuan
5+:
$ 24.6578
50+:
$ 23.6040
200+:
$ 23.0139
500+:
$ 22.8664
1000+:
$ 22.7189
2500+:
$ 22.5503
5000+:
$ 22.4449
7500+:
$ 22.3395
Quantity
5+
50+
200+
500+
1000+
Price
$24.6578
$23.6040
$23.0139
$22.8664
$22.7189
Price $ 24.6578 $ 23.6040 $ 23.0139 $ 22.8664 $ 22.7189
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1316) Minimum order quantity(5)
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Technical parameters/frequency: 4 MHz

Technical parameters/rated voltage (DC): 80.0 V

Technical parameters/rated current: 25.0 A

Technical parameters/rated power: 200 W

Technical parameters/number of pins: 2

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 200 W

Technical parameters/breakdown voltage (collector emitter): 80 V

Technical parameters/thermal resistance: 0.875℃/W (RθJC)

Technical parameters/maximum allowable collector current: 25A

Technical parameters/minimum current amplification factor (hFE): 20 @10A, 4V

Technical parameters/Maximum current amplification factor (hFE): 100

Technical parameters/rated power (Max): 200 W

Technical parameters/DC current gain (hFE): 4

Technical parameters/operating temperature (Max): 200 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 200000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 2

Encapsulation parameters/Encapsulation: TO-204-2

External dimensions/length: 39.37 mm

External dimensions/width: 26.67 mm

External dimensions/height: 8.51 mm

External dimensions/packaging: TO-204-2

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -65℃ ~ 200℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tray

Other/Manufacturing Applications: Power Management, Power Management, Industrial, Industrial

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2016/06/20

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N5885G 2N5885G ON Semiconductor 类似代替 TO-204-2
ON SEMICONDUCTOR 2N5885G. 双极晶体管
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ON SEMICONDUCTOR TIP100G 达林顿双极晶体管
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