Technical parameters/frequency: 4 MHz
Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 600 mA
Technical parameters/number of pins: 2
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/thermal resistance: 0.875℃/W (RθJC)
Technical parameters/maximum allowable collector current: 25A
Technical parameters/minimum current amplification factor (hFE): 20
Technical parameters/Maximum current amplification factor (hFE): 100
Technical parameters/rated power (Max): 200 W
Technical parameters/DC current gain (hFE): 4
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-204-2
External dimensions/length: 39.37 mm
External dimensions/width: 26.67 mm
External dimensions/height: 8.51 mm
External dimensions/packaging: TO-204-2
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5886G
|
ON Semiconductor | 类似代替 | TO-204-2 |
NPN 功率晶体管，ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
|
||
TIP100G
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR TIP100G 达林顿双极晶体管
|
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