Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 10 mA
Technical parameters/breakdown voltage: -25.0 V|25 V
Technical parameters/drain source resistance: 2.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/input capacitance: 7 pF
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/leakage source breakdown voltage: 25 V
Technical parameters/breakdown voltage of gate source: 25 V
Technical parameters/Input capacitance (Ciss): 7pF @15V(Vds)
Technical parameters/rated power (Max): 310 mW
Technical parameters/operating temperature (Max): 135 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 310 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 135℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5458
|
Fairchild | 功能相似 | TO-226-3 |
N沟道通用放大器 N-Channel General Purpose Amplifier
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2N5458
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Motorola | 功能相似 |
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2N5458
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New Jersey Semiconductor | 功能相似 |
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