Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 10.0 mA
Technical parameters/breakdown voltage: 25.0 V|25 V
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/drain source voltage (Vds): 15.0 V
Technical parameters/breakdown voltage of gate source: 25.0 V
Technical parameters/Continuous drain current (Ids): 9.00 mA
Technical parameters/Input capacitance (Ciss): 7pF @15V(Vds)
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5458
|
Fairchild | 功能相似 | TO-226-3 |
N沟道通用放大器 N-Channel General Purpose Amplifier
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2N5458
|
Motorola | 功能相似 |
N沟道通用放大器 N-Channel General Purpose Amplifier
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2N5458
|
New Jersey Semiconductor | 功能相似 |
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2N5458G
|
Rochester | 功能相似 |
JFET的 - 通用型N沟道 - 耗尽 JFETs − General Purpose N−Channel − Depletion
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2N5458G
|
ON Semiconductor | 功能相似 | TO-226-3 |
JFET的 - 通用型N沟道 - 耗尽 JFETs − General Purpose N−Channel − Depletion
|
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