Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 30 @3A, 2V
Technical parameters/rated power (Max): 5 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 5000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3714
|
NTE Electronics | 类似代替 | TO-3 |
NTE ELECTRONICS 2N3714 Bipolar (BJT) Single Transistor, NPN, 80V, 4MHz, 150W, 10A, 40 hFE
|
||
|
|
Microchip | 类似代替 | Tray |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
||
JAN2N3716
|
Microsemi | 类似代替 | TO-3 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
||
JANTX2N3716
|
Microsemi | 完全替代 | TO-3 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
||
|
|
Microchip | 完全替代 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
|||
JANTX2N3716
|
Motorola | 完全替代 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
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