Technical parameters/dissipated power: | 5 W |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @3A, 2V |
|
Technical parameters/rated power (Max): | 5 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 5000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3714
|
NTE Electronics | 功能相似 | TO-3 |
NTE ELECTRONICS 2N3714 Bipolar (BJT) Single Transistor, NPN, 80V, 4MHz, 150W, 10A, 40 hFE
|
||
2N3716X
|
Semelab | 功能相似 | TO-3 |
Trans GP BJT NPN 80V 10A 3Pin(2+Tab) TO-3
|
||
|
|
Microchip | 完全替代 | Tray |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
||
JAN2N3716
|
Microsemi | 完全替代 | TO-3 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
||
|
JANTX2N3715
|
Microsemi | 完全替代 | TO-3 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
||
JANTX2N3715
|
Aeroflex | 完全替代 | TO-3 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review