Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 25 @500mA, 1V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semicoa Semiconductor | 完全替代 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
|||
2N3468
|
Central Semiconductor | 完全替代 | TO-39-3 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
2N3468
|
Semicoa | 完全替代 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
|||
JANTX2N3468L
|
Microsemi | 完全替代 | TO-5 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
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