Technical parameters/dissipated power: 1 W
Technical parameters/minimum current amplification factor (hFE): 25
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/length: 9.4 mm
External dimensions/width: 9.4 mm
External dimensions/height: 6.6 mm
External dimensions/packaging: TO-39-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semicoa Semiconductor | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) PNP
|
|||
2N3468
|
Central Semiconductor | 功能相似 | TO-39-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP
|
||
2N3468
|
Semicoa | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) PNP
|
|||
|
|
Microchip | 功能相似 | TO-39-3 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
||
JANTX2N3468
|
Microsemi | 功能相似 | TO-39 |
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review