Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 1000 @350mA, 2V
Technical parameters/operating temperature (Max): 105 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/length: 10 mm
External dimensions/width: 4 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ULN2003AID
|
TI | 类似代替 | SOIC-16 |
TEXAS INSTRUMENTS ULN2003AID. 芯片, 达林顿晶体管阵列, 500mA x7
|
||
ULQ2003ATDQ1
|
TI | 完全替代 | SOIC-16 |
高电压大CRRENT达林顿晶体管阵列 HIGH-VOLTAGE HIGH-CRRENT DARLINGTON TRANSISTOR ARRAY
|
||
ULQ2003D1013TR
|
ST Microelectronics | 完全替代 | SOIC-16 |
STMICROELECTRONICS ULQ2003D1013TR 双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
|
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