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Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 500 mA
Technical parameters/number of output interfaces: 7
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 950 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical Parameters/Drivers/Packages: 7
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/output current (Max): 500 mA
Technical parameters/rated power (Max): 950 mW
Technical parameters/operating temperature (Max): 105 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/length: 9.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: -40℃ ~ 105℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ULN2003AIDR
|
TI | 完全替代 | SOIC-16 |
TEXAS INSTRUMENTS ULN2003AIDR 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
|
||
ULN2003AIPWR
|
TI | 完全替代 | TSSOP-16 |
TEXAS INSTRUMENTS ULN2003AIPWR 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, TSSOP
|
||
ULQ2003ATDRQ1
|
TI | 完全替代 | SOIC-16 |
TEXAS INSTRUMENTS ULQ2003ATDRQ1 双极晶体管阵列, NPN, 50 V, 950 mW, 500 mA, SOIC
|
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