Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCX19
|
Zetex | 完全替代 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCX19.. 晶体管, NPN
|
||
|
|
Central Semiconductor | 完全替代 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCX19.. 晶体管, NPN
|
||
BCX19
|
Fairchild | 完全替代 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BCX19.. 晶体管, NPN
|
||
BCX19
|
ON Semiconductor | 完全替代 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BCX19.. 晶体管, NPN
|
||
BCX19
|
Multicomp | 完全替代 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCX19.. 晶体管, NPN
|
||
BCX19LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCX19LT1G 单晶体管 双极, NPN, 45 V, 225 mW, 500 mA, 40 hFE
|
||
|
|
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MMBT6429LT1
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ON Semiconductor | 功能相似 | SOT-23-3 |
放大器晶体管( NPN硅) Amplifier Transistors(NPN Silicon)
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MMBT6429LT1
|
Motorola | 功能相似 |
放大器晶体管( NPN硅) Amplifier Transistors(NPN Silicon)
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