Technical parameters/frequency: 700 MHz
Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 200 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.3 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 500 @100µA, 5V
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC80740
|
Fairchild | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
|
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BC857BV
|
NXP | 功能相似 | SOT-666 |
Trans GP BJT PNP 45V 0.1A 6Pin SOT-563
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BC859AW
|
NXP | 功能相似 | SOT-323 |
Transistor: PNP; bipolar; 30V; 100mA; 200mW; SOT323
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|
Philips | 功能相似 | SOT-23 |
NPN硅晶体管自动对焦 NPN Silicon AF Transistors
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BCX70H
|
Kexin | 功能相似 |
NPN硅晶体管自动对焦 NPN Silicon AF Transistors
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PMBT4401@215
|
NXP | 类似代替 | Surface Mount |
PMBT4401@215
|
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